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Silicon Sputtering Target Pure Metal Sputtering Target

XK-03

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Description

Element Symbol
Si
Purity
4N, 5N, 6N
Availble Shape
Planar, Rotary
We supply planar rotary silicon sputtering targets, P type and N type are all available, the purity can up to 6N, the biggest size is 11”. We also supply sprayed rotary silicon sputtering targets, the length can up to 4000mm.
type: poly-crystalline or mono-crystalline
purity:5N, 6N
Growth method: Czochralski (CZ)
density:2.33g/cm3
conductivity type: P type (Boron doped) & N type (phosphorus doped)
Dimension:
length:300mm max
width:150mm max
diameter:300mm max
thickness:3-12mm
tolerance:±0.1mm
Planeness (TIR): < 1.2μm
Partial planeness (STIR): <0.3μm
Warp: <30μm ?
Application
Silicon sputtering ?target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other dielectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which is widely applied to the field of ?LCD transparent conducting glass, LOW-E building ?glass and micro-electronics.
If you are interested, pls email us your specification for a best quotation.

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