Electrical & Hardware
Description
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
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2SK3797 Field Effect Transistor Silicon N-Channel MOS Type ?
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Switching Regulator Applications
? Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)
? High forward transfer admittance: |Yfs| = 7.5 S (typ.)
? Low leakage current: IDSS = 100 μA (VDS = 600 V)
? Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Maximum Ratings (Ta = 25°C)
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Characteristic | Symbol | Rating | Unit |
Drain-source voltage | VDSS | 600 | V |
Drain-gate voltage (RGS = 20 k?) | VDGR | 600 | V |
Gate-source voltage | VGSS | ±30 | V |
Drain current ? ? ? ? ? ? ? ?DC ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ??Pulse (t = 1 ms) | ID | 13 | A |
IDP | 52 |
Drain power dissipation (Tc = 25°C) | PD | 50 | W |
Single pulse avalanche energy | EAS | 1033 | mJ |
Avalanche current | AR | 13 | A |
Repetitive avalanche energy | EAR | 5.0 | mJ |
Channel temperature | Tch | 150 | °C |
Storage temperature range | Tstg | -50-150 | ? ? °C |
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Thermal Characteristics
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Characteristic | Symbol | Max | Unit |
Thermal resistance, channel to case | Rth (ch-c) | 2.5 | w/ °C |
Thermal resistance, channel to abinent | Rth (ch-a) | 62.5 | w/ °C |
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Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 ?
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Shenzhen, Guangdong
China, 518000
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